W掺杂和电化学表面处理制备高光电化学性能的BiVO_4光阳极(英文)

Synthesis of BiVO_4 photoanode with improved photoelectrochemical performance by W-doping and surface electrochemical pretreatment

通过滴涂的方法合成了W掺杂BiVO4光阳极.通过XRD、紫外—可见吸收光谱、扫描电镜(SEM)对BiVO4光阳极进行表征,并对BiVO4光阳极进行了光电化学表征.为了提高W掺杂BiVO4光阳极的光电性能,对W掺杂BiVO4光阳极的制备条件进行了优化.光电化学测试结果表明电化学表面处理能够提高W掺杂BiVO4光阳极的光电化学性能.说明W掺杂和电化学表面处理可以增加BiVO4光阳极光电流.并进行了BiVO4光阳极光电流增加的机理分析.

W-doped BiVO_4 photoanode was obtained through drop-casting method. The physical and pho- tophysical properties of the BiVO_4 photoanode were investigated by X-ray diffraction （XRD）, UV-vis ab- sorption spectroscopy and scanning electron microscopy （SEM）. Photo-electrochemical performance was evaluated for the W-doped BiVO_4 photoanode. In terms of maximizing the photoelectrochemical perform- ances of the W-doped BiVO_4 photoanodes, the synthesis conditions were optimized. The W-doped Bi- VO_4 photoanode exhibits improved photoelectrochemical performance after the electrochemical surface pretreatment. The photoelctrochemical response of BiVO_4 photoanode can be improved by both tungsten doping and the electrochemical surface pretreatment. A possible mechanism was also proposed to explain the reason for the photocurrent enhancement.