高可靠性瓦级660nm半导体激光器研制

Fabrication of Highly Reliable Watt-Level 660 nm Semiconductor Lasers

利用Zn扩散形成非吸收窗口的技术,制备了大功率660nm半导体激光器。在芯片窗口区用选择性扩Zn方式,使得窗口区有源层发光波长蓝移了61nm,有效降低了腔面的光吸收。制备的激光器芯片有源区条宽为150μm,腔长为1000μm,p面朝下用AuSn焊料烧结于AlN陶瓷热沉上。封装后的器件最高输出功率达到了4.2 W,并且没有出现灾变性光学腔面损伤的现象。半导体激光器的水平发散角为6°,垂直发散角为39°,室温1.5A电流下的激光峰值波长为659nm。使用简易的风冷散热条件,在1.5 A连续电流下老化10只激光器,4000h小时仍未出现失效现象。可见,所制备的660nm半导体激光器在瓦级以上功率连续输出时同时具有可靠性高及使用成本低的优势。

The high power 660 nm semiconductor laser is fabricated with non-absorbing window structure by Zn diffusion method.The photoluminescence wavelength of the active layer near the window region blue shifts by61 nm with the selective Zn diffusion in the window region of the chips,which effectively reduces the optical absorption of the cavity facets.The stripe width is 150μm and the cavity length is 1000μm.The chips are sintered with AuSn solder by p-side down onto the AlN heat sink.The packaged device shows the highest output power of4.2 W without catastrophic optical damage.The horizontal divergence angle of the semiconductor laser is 6°and the vertical divergence angle is 39°.The emission peak wavelength of the laser is 659 nm at room temperature and the current of 1.5 A.The 10 semiconductor lasers are aged at the current of 1.5 Ain continuous-wave mode with the simple air-cooled heat dissipation condition,and no failure has ever occurred for 4000 h.Therefore,the 660 nm semiconductor laser with watt-level output power has the advantage of high reliability and low operating cost.