摘要
A study of the self-healing phenomenon of Cu2ZnSn（S, Se）4（CZTSSe） solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage（V（oc）） and fill factor（F F）. In addition, up to 10.45% power conversion efficiency（PCE） has been achieved.No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction（XRD） pattern, Raman spectrum, ultraviolet-visible（UV-Vis）, and TOF-SIMS.Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
A study of the self-healing phenomenon of Cu2ZnSn（S, Se）4（CZTSSe） solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage（V（oc）） and fill factor（F F）. In addition, up to 10.45% power conversion efficiency（PCE） has been achieved.No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction（XRD） pattern, Raman spectrum, ultraviolet-visible（UV-Vis）, and TOF-SIMS.Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
基金
supported by the National Natural Science Foundation of China(Grant Nos.91733301,51761145042,91433205,11474333,51421002,51627803,and51572288)
the International Partnership Program of the Chinese Academy of Sciences(Grant No.112111KYSB20170089)
