摘要
Colloidal silicon quantum dots （Si QDs） hold great promise for the development of printed Si electron- ics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for op- toelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes （LEDs） play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD sur- face and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.
Colloidal silicon quantum dots （Si QDs） hold great promise for the development of printed Si electron- ics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for op- toelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes （LEDs） play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD sur- face and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.
