期刊文献+

基于电光采样的超快脉冲波形参数实验研究 被引量:1

Experimental Investigation of Ultrafast Pulse Waveform Parameter Based on Electro-Optic Sampling
原文传递
导出
摘要 针对NTN技术的脉冲波形参数国家基准已无法完全满足目前超高速电脉冲波形测量和校准的现状,构建了基于电光采样技术的脉冲波形参数测量系统,自主设计并制备了钽酸锂基共面波导结构的高频电光调制器,通过网络分析系统测量得到了其3dB频率响应可达100GHz。以高速光电探测器输出的电脉冲波形作为待测信号,对系统参数进行了详细的分析和优化。在优化完善的基础上,最终实现了对70GHz高速光电探测器输出电脉冲波形的精密测量,获得的波形的上升时间和半峰全宽分别为4.6ps和5.0ps,这将为我国基于电光采样技术脉冲波形参数国家基准的建立和持续提升提供参考。 The national standard of pulse waveform parameter based on the NTN technique cannot fully meet the measurement and calibration requirements of the current ultra-high speed electrical pulse waveform.We structure the pulse waveform measurement system based on electro-optic sampling technique and independently design and prepare the high frequency LiTaO_3-based electro-optic modulator with coplanar waveguide structure.The 3 dB frequency of the modulator measured by the network analysis system can reach 100 GHz.We optimize the system parameters by analyzing the experimental results of the output pulse waveform of photodetector.On the basis of the above optimization and improvement,we finally achieve the precise measurement for the electric pulse waveform of 70 GHz high-speed photodetector,and the rise time and full width at half maximum of the measured waveform are 4.6 ps and 5.0 ps,respectively.It will give reference for the establishment and sustained promotion of the national standard pulse waveform parameters of our country based on the electro-optic sampling technique.
作者 冯志刚 赵科佳 杨智君 吴钒 陈赫 缪京元 李抵非 吴昭春 何昭 Feng Zhigang;Zhao Kejia;Yang Zhijun;Wu Fan;Chen He;Miao Jingyuan;Li Difei;Wu Zhaochun;He Zhao(Division of Eletronies and Information Technology, National Institute of Metrology, Beijing 100029, China)
出处 《光学学报》 EI CAS CSCD 北大核心 2018年第5期359-365,共7页 Acta Optica Sinica
基金 国家科技支撑计划(2014BAK02B03) 中国计量科学研究院基本科研业务费项目(27-AKY1705) 中国计量科学研究院探索性科研项目(27-AKYCX1604)
关键词 计量 脉冲波形 电光采样 上升时间 电光调制 metrology pulse waveform electro-optic sampling rise time electro-optic modulation
  • 相关文献

参考文献2

二级参考文献15

  • 1刘秀环,陈占国,贾刚,张晓婷,张玉红.硅材料场致等效二阶极化率张量的研究[J].光学学报,2005,25(10):1391-1395. 被引量:3
  • 2M. Salib, L. Liao, R. Jones et al.. Silicon photonics[J]. Intel Technol. J., 2004, 8(2): 143-160
  • 3H. Rong, R. Jones, A. Liu et al.. A continuous-wave Raman silicon laser[J]. Nature, 2005, 433(7027): 725-728
  • 4A. Liu, H. Rong, M. Paniccia et al.. Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering[J]. Opt. Express, 2004, 12(18): 4261-4268
  • 5A. Liu, R. Jones, L. Liao et al.. A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor[J]. Nature, 2004, 427(6975): 615-618
  • 6K. J. Vahala. Optical microcavities[J]. Nature, 2003, 424(6950): 839-846
  • 7R. A .Soref, B. R. Bennett. Electrooptical effects in silicon[J]. IEEE J. Quantum Electron., 1987, QE-23(1): 123-129
  • 8D. Xiao, E. Ramsay, D. T. Reid et al.. Optical probing of a silicon integrated circuit using electric-field-induced second-harmonic generation[J]. Appl. Phys. Lett., 2006, 88(11): 114107
  • 9T. V. Dolgova, A. A. Fedyanin, O. A. Aktsipetrov. Dc-electric-field-induced second-harmonic interferometry of the Si(111)-SiO2 interface in Cr-SiO2-Si MOS capacitor[J]. Phys. Rev. B, 2003, 68(7): 073307
  • 10J. E. Sipe, D. J. Moss, H. M. van Driel. Phenomenological theory of optical second- and third-harmonic generation from cubic and centrosymmetric crystals[J]. Phys. Rev. B, 1987, 35(3): 1129-1141

共引文献6

同被引文献3

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部