双极型晶体管制造工艺SOD技术研究

The SOD Technical Investigation in Bipolar Process

有两种不同的双极晶体管NPN和PNP,NPN发射极emitter的工艺控制决定了晶体管的结深,在双极性晶体管制造工艺中是非常重要的,发射结的深浅和工艺质量决定了双极性晶体管的很多重要参数,如晶体管的放大能力,相关耐压的高低,漏电大小,是NPN晶体管应用的重要表征参数。在NPN工艺过程中,同时也可以形成emitter发射区(SN)在base基区(SP)的SP挤压电阻,该电阻值比较大,基本上在高阻KΩ级别。该电阻可以表征在工艺过程中NPN管base基区的控制和emitter发射区在base基区中推进的最终结深,是NPN管常规监控的一个重要参数,在启动电路中和大电阻设计需要中有着普遍的应用。有时SP pinched电阻的敏感度对于emitter发射区在base基区的结深和浓度表征高于NPN晶体管的相关电压和漏电测试,因此也常常设计来监控NPN制造工艺。研究NPN管制造工艺中发射极的SOD技术,为解决产品问题提供指导。

There are 2 types of the Bipolar transistor, NPN and PNP. The emitter process control is critical to the junction of the NPN Bipolar transistor and it is very important in the Bipolar manufacture process. The junction of the emitter and the process quality define the critical parameters of the Bipolar transistor, such as the breakdown of the transistor, the leakage and the Beta of the transistors, which are important assessment on the good Bipolar transistor. In the Bipolar process together with the NPN transistor, we can design the SP base pinched resistor, which is pinched at the base area by the following emitter process area. A pinch resistor consists of a combination of base and emitter diffusions. The value of the SP pinched resistor can show the control of the emitter junction with the base area, which is another important monitor parameter to the NPN Bipolar transistor. Pinch resistors find application in startup circuits and high-value KΩ resistors. Sometimes the SP pinched resistor data is more sensitive than the breakdown and the leakage of the transistor test, and then the SP pinched resistor structure in the PCM module is common and wide used to monitor the manufacture of the NPN process. The paper focus on the investigation of the SOD technical improvement in the Bipolar process, show the instruction on the product problem.