一种宽电压工作的闪存灵敏放大器电路

A Wide Operating Voltage Sense Amplifier of Flash Memory

基于华虹宏力0.11μm低漏电嵌入式闪存工艺平台,提出和设计了一种低电压灵敏放大器电路,结合已有的高电压工作灵敏放大器电路,实现了嵌入式闪存在宽范围(1.08 V～1.65 V)电源电压下的读取。闪存模块的测试芯片在华虹宏力0.11μm嵌入式闪存工艺上完成流片,测试结果表明该模块读取工作电压范围为1.0 V～1.7 V,在正常工作电压1.5 V时读取时间为25 ns,在低电压1.2 V时读取时间为53 ns。

Based on Hua Hong Grace（HHG） 0.11μm Ultra Low Leakage（ULL） embedded flash memory technology, a low operating voltage sense amplifier is proposed and implemented in this paper. Combined with existing high voltage operating sense amplifier in the embedded flash memory macro, the read operation can work with wide voltage range from 1.08 V to 1.65 V. A testchip of the Flash memory macro is designed and manufactured using HHG 0.11μm ULL embedded flash memory technology. The testing result shows the macro can work from 1.0 V to 1.7 V. At 1.5 V, the read access time is 25 ns and at 1.2 V, the read access time is 53 ns.