SiC单晶片的激光标识技术研究

Study on Laser Identification of SiC Wafer

研究了激光的功率、标刻速度、频率等对打标深度的影响,通过多组实验,观察不同参数下,打标效果的变化。确定了激光功率为50%,标刻速度为100 mm/s,频率为20 k Hz,脉冲宽度为10μs的工艺参数,有效地改善了碳化硅晶片的标记效果,优化后的激光打标工艺更好地应用于Si C晶片生产加工中。

In this paper,the effects of laser power,marking speed and frequency on the marking depth are studied,and the change of marking effect is observed under different parameters through multiple experiments. To determine the laser power is 50%,marking the rate of 100 mm/s,the frequency of 20 k Hz,pulse width of 10 μs process parameters,which efficiently improved the marked effect of silicon carbide wafer,the optimized laser marking technology better application in SiC wafers to production and processing.