摘要
A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.
A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.
作者
Anqi Wang
Zhixin Meng
Yanying Feng
王安琪;孟至欣;冯焱颖(State Key Laboratory of Precision Measurement Technology and Instruments,Department of Precision Instruments,Tsinghua University)
基金
supported by the National Natural Science Foundation of China(No.61473166)
