矩形阵列阴极绿色磷光透明有机电致发光器件

Application of rectangular array alloy cathode in green phosphoresce transparent organic light-emitting device

为了提高透明OLED的出光效率,本文采用了网孔阴极掩膜版结合Al:Ag合金制备了透明器件的阴极,得到了呈规则排布的矩形阵列状的阴极。加上电压后,这些小的发光区域就会形成一整个连续发光的面。同时,矩阵式的阴极即可以作为反射阴极给底发射提供一部分光,在一定程度上也减薄了阴极厚度,从而提升了顶发射的出光率。器件具体结构如下:Glass/ITO/MoO_3(40nm)/NPB(40nm)/TCTA(10nm)/CBP:Ir(ppy)_2(acac)(14%)(30nm)/BCP(10nm)/Alq3(30nm)/LiF(1nm)/Al:Ag(1∶3)(xnm),x=75,80,85和90。实验过程中发现阴极Al:Ag(1∶3)厚度为80nm时,器件的电子注入能力较强,开启电压有所降低,亮度达到最高,底发射和顶发射亮度分别为10 120cd/m^2和2 894cd/m^2。当阴极厚度为70nm、波长为595nm时取得了透过率的最大值65.44%。器件在阴极合金厚度为90nm时,取得了最高效率20.48cd/A。

In order to improve the transmittance and luminous efficiency of transparent organic light-emit- ring device （TOLED） ,this article adopts mesh cathode mask combined with Al.Ag alloy to prepare the cathode of TOLED,which can obtain a rectangular array of cathodes. After applying voltage to the de- vice, such a variety of light-emitting pieces can constitute a uniform continuous lumincus surface. Mean- while, the rectangular cathode not only can serve as a reflecting cathode to provide a part of the light for the bottom emission but also can reduce the thickness of cathode to improve the top emission luminance. The structure of the device is Glass/ITO/MoO3 （40 nm）/NPB（40 nm）/TCTA（10 nm）/CBP.Ir（ppy）2 （acac）（14%）（30 nm）/BCP（10 nm）/Alq3 （30 nm）/LiF（1 nm）/Al：Ag（1 ： 3）（x nrn）,where x=75, 80,85 and 90. The experimental results show that when the thickness of Al：Ag alloy is 80 nrn,the de- vice has stronger electron injection ability, and the turn-on voltage can be reduced. Similarly, when the cathode thickness is 80 an,the device has the highest brightness,and the luminance values for bottom e- mission from ITO anode side are 10 120 cd/m2 and 2 894 cd/m2 ,respectively. When the cathode thick- ness is 70 an,the entire transmittance of the device achieves about 65.44% at 595 nm. When the cath- ode thickness is 90 nm,the maximum luminous efficiency is 20. 48 cd/A.