一次再结晶取向硅钢中第二相粒子局部密度与晶界的关系

Relationship between local densities of second-phase particles and corresponding grain boundary in primary recrystallized grain-oriented silicon steel

采用场发射扫描电镜（FESEM）结合电子背散射衍射技术（EBSD）对一次再结晶取向硅钢中的Goss晶粒、黄铜晶粒及其周边相邻晶粒在晶界附近1μm范围内尺寸大于40 nm的Mn S第二相粒子的局部密度与相应晶界的关系进行了统计分析。结果表明：900℃再结晶退火后,Goss晶粒周边出现频次较高的晶粒取向分别为{112}〈111〉、{111}〈110〉、{411}〈148〉和{111}〈112〉,其中有利于Goss晶粒异常长大的{111}〈110〉、{111}〈112〉和{411}〈148〉取向出现频次之和占总量的57.7%;黄铜取向晶粒周边出现频次较高的则为{111}〈110〉、{112}〈111〉、{111}〈112〉和{411}〈148〉,其中{111}〈110〉、{111}〈112〉和{411}〈148〉出现频次占总量的68.7%;Mn S第二相粒子的局部密度差随晶界组合不同而变化,其中Goss-{111}〈110〉组合的最大。

The relationship between the local density of Mn S second-phase particles with size larger than 40 nm in a range of 1 μm near the grain boundary of Goss,Brass and their neighbor grains and the corresponding boundaries in the primary recrystallized grain-oriented silicon steel was analyzed by means of field emission scanning electron microscopy（ FESEM） and electron backscattered diffraction（ EBSD） technology. The results show that after recrystallization annealing at 900 ℃,the orientations of the grains neighboring the Goss grains with relative high appearance frequency are {112}〈111〉、{111}〈110〉、{411}〈148〉 and {111}〈112〉 ,and the portion of those in favor of abnormal growth of the Goss grains,i. e.,{111}〈110〉、{411}〈148〉 and {111}〈112〉 ,is about 57. 7% of the total,while the orientations are {111}〈110〉、{411}〈148〉 and {111}〈112〉 {411}〈148〉 for the Brass grains,and the total appearance frequency of { 111} 〈110〉 ,{ 411} 〈148 〉and { 111}〈 112〉 is about 68. 7%. The difference of local density of the second-phase Mn S particles varies with the change of the combination of grain boundary,and the largest density difference is obtained in the Goss-{ 111}〈 110〉 group.