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Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching[Invited]

Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching [Invited]
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摘要 We report the fabrication and characterization of silicon carbide microdisks on top of silicon pillars suited for applications from near-to mid-infrared. We probe 10 μm diameter disks with different under-etching depths,from 4 μm down to 1.4 μm, fabricated by isotropic plasma etching and extract quality factors up to 8400 at telecom wavelength. Our geometry is suited to present high Q single-mode operation. We experimentally demonstrate high-order whispering-gallery mode suppression while preserving the fundamental gallery mode and investigate some requirements for nonlinear optics applications on this platform, specifically in terms of quality factor and dispersion for Kerr frequency comb generation. We report the fabrication and characterization of silicon carbide microdisks on top of silicon pillars suited for applications from near- to mid-infrared. We probe 10 μm diameter disks with different under-etching depths, from 4 μm down to 1.4μm, fabricated by isotropic plasma etching and extract quality factors up to 8400 at telecom wavelength. Our geometry is suited to present high Q single-mode operation. We experimentally demonstrate high-order whispering-gallery mode suppression while preserving the fundamental gallery mode and investigate some requirements for nonlinear optics applications on this platform, specifically in terms of quality factor and dispersion for Kerr frequency comb generation.
出处 《Photonics Research》 SCIE EI 2018年第5期I0099-I0106,共8页 光子学研究(英文版)
基金 Agence Nationale de la Recherche(ANR)(MIRSICOMB ANR-17-CE24-0028) FP7 People:Marie-Curie Actions(PEOPLE)(PCIGA-2013-631543)
关键词 Invited Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching SI Toward mid-infrared nonlinear optics applications silicon carbide microdisks engineered by lateral under-etching
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