基于CMOS工艺的太赫兹探测器

Terahertz Detector Based on CMOS Process

提出了一种新型多频太赫磁探测器电路结构,采用圆形、菱形以及环形天线嵌套式构成多频探测单元,四个探测器相互之间设计保护层包围隔离,防止外部电路对其影响。在高频结构仿真器（HFSS）下对设计的双环差分天线、单环差分天线、圆形开槽天线和菱形天线进行模型与特性参数仿真优化。基于TSMC CMOS 0.18μm工艺制备了多频太赫兹探测器芯片,该芯片能实现280,290,320,600和806 GHz多频段探测功能。测试结果表明,双环天线结构、圆形开槽天线结构、菱形天线结构和单环差分天线结构的探测器在阈值电压为0.42 V时,最佳响应度分别为366.6,1 286.6,366.3和701.2 V/W,最小噪声等效功率分别为0.578,0.211,0.594和0.261 nW√Hz。

A novel multi-frequency terahertz detector circuit structure was proposed. The multi-frequency detector unit was composed of nesting circular,rhombic and ring antennas. The four detectors were protected by the isolation layer between each other to prevent the impact of external circuits. The model and characteristic parameters of the dual-ring differential antenna,the single-ring differential antenna,the circular slot antenna and the diamond antenna were simulated and optimized with high frequency structure simulator（ HFSS）. In addition,the multi-frequency terahertz detector chip was fabricated based on the TSMC CMOS 0. 18 μm process,which can achieve 280,290,320,600 and 806 GHz multi-frequency detection function. The results show that at the threshold voltage of 0. 42 V,the optimum corresponding response of the dual-ring antenna structure,the circular slot antenna structure,diamond antenna structure and the single loop differential detector are 366. 6,1 286. 6,366. 3,701. 2 V/W,respectively. The lowest noise equivalent powers are 0. 578,0. 211,0.594 and 0. 261 nW/√Hz,respectively.