摘要
采用0.18μm SiGe BiCMOS工艺,设计了一种应用于全球导航卫星系统的低噪声放大器。该低噪声放大器采用小型化栅格阵列封装,内部集成了旁路控制单元,所有I/O端口均加入了ESD保护电路。对封装后的芯片进行了测试。结果表明,在GNSS频率范围内,该芯片的正向增益为20.1dB,噪声系数小于1.1dB,输入1-dB压缩点和输入3阶交调点分别为-12dBm和-5dBm,在2.7V电源电压下消耗电流3.7mA,芯片尺寸为0.63mm×0.64mm。
A low noise amplifier（LNA）for global navigation satellite system（GNSS）receiver modules was designed in a standard 0.18μm SiGe BiCMOS technology.The circuit was packaged in land grid array（LGA）.A power shutdown control element was integrated in the internal circuit,and the electrostatic discharge（ESD）protection units were added at all I/O pads.The circuit was taped out,packaged,and measured.The results showed that the proposed LNA achieved a gain of 20.1 dB and an ultra low noise figure of 1.1 dB while providing an input-referred 1 dB compression point（IP1 dB）of-12 dBm and a 3 rd-order intercept point（IIP3）of-5 dBm in the frequency range of GNSS.The total current consumption was 3.7 mA at a supply voltage of 2.7 V,and the overall chip size was 0.63 mm× 0.64 mm.
作者
吕育泽
李晋
万天才
LU Yuze;LI Jin;WAN Tiancai(Southwest Integrated Circuit Design Co. , Ltd. , Chongqing 401332, P. R. China;Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第3期285-288,共4页
Microelectronics
