摘要
提出了一种高Q值、高线性度SiGe HBT有源电感。基于NPN SiGe HBT共发射极-共基极-共集电极结构,引入有源负阻网络,以提高有源电感的Q值。采用前馈电流源,提高了有源电感的线性度。基于0.35μm SiGe BiCMOS工艺对有源电感进行了仿真验证,并分析了该有源电感的电感值、Q值以及线性度。该有源电感适用于对Q值、线性度要求较高的射频电路。
An SiGe HBT active inductor with high Qvalue and high linearity was presented.Based on common emitter-common base-common collector（Cascode-CC）structure,an active negative resistance network was employed to improve the Qvalue.The feed-forward current source（FFCS）was applied to improve the linearity of the active inductor.In addition,the performances of the active inductor were verified with a 0.35μm SiGe BiCMOS technology.The inductance,Qvalue and the linearity were analyzed.The active inductor met the requirements of high Qvalue and high linearity for the RF circuits.
作者
赵彦晓
王亚飞
李振松
张万荣
丁红
ZHAO Yanxiao;WANG Yafei;LI Zhensong;ZHANG Wanrong;DING Hong(School of Information ＆ Communication Engineering, Beij ing Information Science ＆ Technology University Beijing 100101, P. R. China;Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第3期344-347,共4页
Microelectronics
基金
国家自然科学基金资助项目(61574010
61774012)
国家自然科学基金青年基金资助项目(61601038)
北京市教委面上项目(KM201611232012)
关键词
有源负阻网络
前馈电流源
有源电感
SiGe
HBT
线性度
active negative resistor network
feed-forward current source
active inductor
SiGe HBT
linearity
