摘要
在低供电电压下,Sigma-Delta调制器因信号摆幅的限制很难达到较高的精度和线性度。工作在低压弱反型区的MOS管限制了电路的速度、增益和MOS开关的性能。总结了近年来低压、低功耗Sigma-Delta调制器的研究成果。在Sigma-Delta调制器的结构与电路设计方面,介绍了离散和连续时间调制器在低压下面临的问题及解决方案。
The performances of sigma-delta modulator were limited by the small signal swing under low supply voltage,so it was hard to achieve high linearity and resolution.The MOS transistors working at weak inversion region of low voltage restricted the circuit's speed,gain and the MOS switch's performances.The research results in low voltage and low power sigma delta modulator in recent years were summarized.In terms of the architecture and circuit design of sigma delta modulator,the challenges and solutions for existing low voltage techniques in both continuous time and discrete time sigma delta modulators were introduced.
作者
吕立山
周雄
李强
LU Lishan;ZHOU Xiong;LI Qiang(School of Microelectronics , University of Electronic Science and Technology of China, Chengdu 610054, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第3期395-400,共6页
Microelectronics
基金
国家自然科学基金资助项目(61534002)