摘要
采用磁控溅射法制备Sn/Cu/ZnS金属预置层,结合硫化热处理制备Cu2ZnSnS4薄膜。利用X射线衍射仪(XRD)、拉曼光谱仪(Raman)、扫描电子显微镜(SEM)、紫外-可见分光光度计(UV-VIS)和霍尔测试系统等一系列测试方法对样品结构、各组分含量、表面形貌、光学带隙及电学性能进行表征及计算。研究结果表明Sn/Cu/ZnS金属预置层经490和540℃硫化热处理后的薄膜均为单一Cu2ZnSnS4相,其中,540℃硫化热处理后的薄膜结晶度较高,且薄膜表面平整致密,禁带宽度约为1.58 eV,呈现P型导电。
Cu2ZnSnS4 thin films were prepared by magnetron sputtering Sn/Cu/ZnS metal pre-layers followed bysulfurization. A series of test methods such as X-ray diffraction(XRD),Raman spectrometer(Raman),scanningelection microscopy(SEM),UV-visible spectrophotometer(UV-VIS)and Hall effect measurements were used tocharacterize and calculate the sample structure and each component content,surface morphology,optical band gap andelectrical properties. The research results show that the films of Sn/Cu/ZnS metal pre-layers after sulfidation treatment at490 and 540 ℃ are single Cu2ZnSnS4 phases. The thin film after sulfurization treatment at 540 ℃ has higher crystallinity,the surface of the thin film is smooth and compact. The band gap is estimated to be 1.58 eV and presenting P-typeconduction.
作者
孙亚明
于万秋
张勇
华中
Sun Yaming;Yu Wanqiu;Zhang Yong;Hua Zhong(Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2018年第6期1600-1604,共5页
Acta Energiae Solaris Sinica
基金
吉林师范大学博士科研启动项目(2015016)