磁控溅射Sn/Cu/ZnS预置层后硫化法制备Cu2ZnSnS4薄膜及其性能研究

FABRICATION AND PROPERTY OF Cu2ZnSnS4 THIN FILM BY MAGNETRON SPUTTERING Sn/Cu/ZnS PRECURSOR FOLLOWED BY SULFURIZATION

采用磁控溅射法制备Sn/Cu/ZnS金属预置层,结合硫化热处理制备Cu2ZnSnS4薄膜。利用X射线衍射仪（XRD）、拉曼光谱仪（Raman）、扫描电子显微镜（SEM）、紫外-可见分光光度计（UV-VIS）和霍尔测试系统等一系列测试方法对样品结构、各组分含量、表面形貌、光学带隙及电学性能进行表征及计算。研究结果表明Sn/Cu/ZnS金属预置层经490和540℃硫化热处理后的薄膜均为单一Cu2ZnSnS4相,其中,540℃硫化热处理后的薄膜结晶度较高,且薄膜表面平整致密,禁带宽度约为1.58 eV,呈现P型导电。

Cu2ZnSnS4 thin films were prepared by magnetron sputtering Sn/Cu/ZnS metal pre-layers followed bysulfurization. A series of test methods such as X-ray diffraction（XRD）,Raman spectrometer（Raman）,scanningelection microscopy（SEM）,UV-visible spectrophotometer（UV-VIS）and Hall effect measurements were used tocharacterize and calculate the sample structure and each component content,surface morphology,optical band gap andelectrical properties. The research results show that the films of Sn/Cu/ZnS metal pre-layers after sulfidation treatment at490 and 540 ℃ are single Cu2ZnSnS4 phases. The thin film after sulfurization treatment at 540 ℃ has higher crystallinity,the surface of the thin film is smooth and compact. The band gap is estimated to be 1.58 eV and presenting P-typeconduction.