期刊文献+

离子注入后氧化层BOE腐蚀工艺优化 被引量:3

下载PDF
导出
摘要 半导体器件制备过程中,Si O2牺牲氧化层经常作为离子注入的阻挡层,用来避免Si材料本身直接遭受离子轰击而产生缺陷,牺牲氧化层在注入完成之后,氧化层的性质和结构会发生较大变化,在被腐蚀去除过程中,腐蚀速率不确定性较大,本文研究了牺牲氧化层的腐蚀工艺选择过程。
作者 商亚峰
出处 《中国新技术新产品》 2018年第11期63-64,共2页 New Technology & New Products of China
  • 相关文献

参考文献1

二级参考文献10

  • 1[1]Wagner R S and Ellis W C.Vapor-Liquid-Solid Mechanism of Single Crystal Growth.Appl.Phys.lett.1964 (4):89
  • 2[2]Sunkara M K,Sharma S and Miranda R.Bulk Synthesis of Silicon Nanowires Using a Low-Temperature Vapor-Liquid-Solid Method.Appl.Phys.lett,2001 (79):1546
  • 3[3]Yan H F,Xing Y J and Hang Q L,Growth of Amorphous Silicon Nanowires Via Solid-Liquid-Solid Mechanism,Chemical Physics letters,2000(323):224
  • 4[4]Tang Y H,Zhang Y F and Lee C S,et al,Morphology of Si Nanowires Synthesized by High-Temperature Laser Ablation.J.Appl.Phys.1999 (85):7981
  • 5[5]Bargatin I,Myers E B and Arlett J,et al.Sensitive Detection of Nanomechanical Motion Using Piezoresistive Signal Downmixing.Appl.Phys.Lett.2005(86):133109
  • 6[6]Chien F S S,Wu C L and Chou Y C,et al.Nanomachining of (110)-Oriented Silicon by Scanning Probe Lithography and Anisotropic Wet Etching.Appl.Phys.lett,1999 (75):2429
  • 7[7]Ono Y,Yamazaki K and Takahashi Y.Si Single-Electron Transistors with High Voltage Gain,IEICE Trans.Electron on Electronics,2001(84):1061
  • 8[8]Kim D H and Sung S K.Si Single-Electron Transistors with Sidewall Depletion Gates and Their Application to Dynamic Single-Electron Transistor Logic.IEEE Trans.Electron Devices meeting,2001,IEDM technical digest,International,2001:7.3.1
  • 9[9]Tixier-Mita,Nakamura A K and Laine A,et al.Single Crystal Nanoresonators at 100 MHz Fabricated by a Simple Batch Process.The 13th International Conference on Solid-State Sensors,June 5-9,2005
  • 10[10]Takashi Y,Takahiro K,and Kyoichi I.Photo-Induced Preferential Anodization for Fabrication of Monocrystalline Micromechanical Structures,Micro electromechanical systems,1992:56

同被引文献9

引证文献3

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部