发射区及基区工艺对晶体管大电流特性的影响

Effect of the Launch Zone and Base Zone Technology on the High Current Characteristics of Transistors

根据大电流特性影响的理论知识,结合该公司的实际情况,对发射区、基区工艺进行试验分析,结果表明基区浓度、发射区浓度对晶体管的大电流特性影响比较大。

Based on the theoretical knowledge of the influence of high current characteristics and the actual situation of the company,the experiments and analysis of the launch area and base area process are carried out.The results show that the base area concentration and the emission area concentration have a relatively large impact on the high current characteristics of transistors.