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Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode
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摘要 We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source. We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.
作者 Ya-Jie Li Jia-Qi Wang Lu Guo Guang-Can Chen Zhao-Song Li Hong-Yan Yu Xu-Liang Zhou Huo-Lei Wang Wei-Xi Chen Jiao-Qing Pan 李亚节;王嘉琪;郭露;陈光灿;李召松;于红艳;周旭亮;王火雷;陈娓兮;潘教青(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049;Department of Applied Physics and Materials Science,California Institute of Technology, California 91125, USA;State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第4期38-41,共4页 中国物理快报(英文版)
基金 Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405301 the National Natural Science Foundation of China under Grant Nos 61604144 and 61504137
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