水热合成纳米V_2O_5·nH_2O及其负微分电阻器件

Preparation and negative differential resistance device of nano V_2O_5·nH_2O through hydrothermal synthesis

采用水热法以偏钒酸铵和硝酸制备水合五氧化二钒(V_2O_5·nH_2O)纳米带,采用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线粉末衍射分析仪(XRD)及拉曼光谱分析仪(Raman Spectra)对产物进行表征,采用半导体特性分析仪测试以产物为沟道的场效应器件性能。结果表明:制得的V_2O_5·nH_2O纳米带宽100~150nm,厚约20nm,含水量n在0.5~1之间,具有类晶结构;器件具有N型负微分电阻(N-NDR)效应,与V_2O_5·nH_2O的双载流子导电及Poole-Frenkel发射相关。栅压为0~9V时,开关电压随栅压增大而升高,峰谷电流比变化小,期间,栅压为1V时电压跨度最大为0.61V。

Hydrated vanadium pentoxide（V2O5·nH2O）nanobelts were prepared by hydrothermal synthesis with NH4VO3 and HNO3.The products were characterized by field emission scanning electron microscopy（FE-SEM）,transmission electron microscopy（TEM）,X-ray powder diffraction（XRD）and Raman spectra.Semiconductor characterization system was employed to test the performance of field effect transistor device which worked as channel.The results showed that the as-prepared V2O5·nH2O nanobelts had a width around 100-150 nm,the thick was about 20 nm,the water content‘n＇was in the range of 0.5-1,and crystal-like structure were demonstrated.The device exhibited N-type negative differential resistance（N-NDR）characteristic.The performance was related with ambipolar transportation and Poole-Frenkel emission of V2O5·nH2O.While the gate voltage rising within 0-9 V,the switching voltages ascended and the peak-valley current ratios varied slightly,during that,the voltage spans peaked at 0.61 V when the gate voltage was 1 V.