磁控溅射Nb掺杂TiO_2薄膜的研究

Effect of Nb-Content on Properties of Nb-Doped TiO_2 Films Grown by Magnetron Sputtering

用射频/直流溅射法研制了铌掺杂TiO_2透明导电薄膜。实验结果表明:Nb以正五价态掺入TiO_2晶格中,随着Nb掺杂量的逐渐增加,薄膜的电阻率出现先降后升的变化,在掺杂溅射功率为40 W时,薄膜电阻率降至7.3×10-4Ω·cm,可见光透过率高达86%以上。并且,Nb掺杂使TiO_2薄膜的吸收限产生了蓝移,随着Nb掺杂量的增加,薄膜蓝移程度逐渐增大,说明该TiO_2薄膜为n型掺杂。研究认为,控制Nb掺杂量达最佳时,使晶格中产生较多的载流子,以及良好晶体结构产生较大的载流子迁移率,能使Nb掺杂TiO_2透明导电薄膜的性能参数得到有效改善。

The Nb-doped TiO2（NTO） transparent conductive thin films were deposited by RF/DC magnetron co-sputtering of TiO2,Nb2O5 and Ti targets. The Influence of the Nb-content on the microstructures and properties of the Nb-doped TiO2 coatings was investigated with X-ray diffraction,X-ray photoelectron spectroscopy and atomic force microscopy. The results show that the Nb-content has a major impact. To be specific,as the Nb-content increased,the resistivity of the n-type NTO coatings was found to change in a decrease-increase manner and an increasingly big blue-shift of the absorption edge was observed. Synthesized at a sputtering power of 40 W of Nb-target,the lowest resistivity was 7. 3 × 10-4Ω·cm and the transmittance in visible light range was over 86%. We concluded that the optimized Nb-content may result in better crystallinity and larger carrier mobility.