期刊文献+

In situ observation of atomic movement in a ferroelectric film under an external electric field and stress

In situ observation of atomic movement in a ferroelectric film under an external electric field and stress
原文传递
导出
摘要 Atomic movement under application of external stimuli (i.e., electric field or mechanical stress) in oxide materials has not been observed due to a lack of experimental methods but has been well known to determine the electric polarization. Here, we investigated atomic movement arising from the ferroelectric response of BiFeO3 thin films under the effect of an electric field and stress in real time using a combination of switching spectroscop)6 time-resolved X-ray microdiffraction, and in situ stress engineering. Under an electric field applied to a BiFeO3 film, the hysteresis loop of the reflected X-ray intensity was found to result from the opposing directions of displaced atoms between the up and down polarization states. An additional shift of atoms arising from the linearly increased dielectric component of the polarization in BiFeO3 was confirmed through gradual reduction of the diffracted X-ray intensity. The electric-field- induced displacement of oxygen atoms was found to be larger than that of Fe atom for both ferroelectric switching and increase of the polarization. The effect of external stress on the BiFeO3 thin film, which was controlled by applying an electric field to the highly piezoelectric substrate, showed smaller atomic shifts than for the case of applying an electric field to the film, despite the similar tetragonality. Atomic movement under application of external stimuli (i.e., electric field or mechanical stress) in oxide materials has not been observed due to a lack of experimental methods but has been well known to determine the electric polarization. Here, we investigated atomic movement arising from the ferroelectric response of BiFeO3 thin films under the effect of an electric field and stress in real time using a combination of switching spectroscop)6 time-resolved X-ray microdiffraction, and in situ stress engineering. Under an electric field applied to a BiFeO3 film, the hysteresis loop of the reflected X-ray intensity was found to result from the opposing directions of displaced atoms between the up and down polarization states. An additional shift of atoms arising from the linearly increased dielectric component of the polarization in BiFeO3 was confirmed through gradual reduction of the diffracted X-ray intensity. The electric-field- induced displacement of oxygen atoms was found to be larger than that of Fe atom for both ferroelectric switching and increase of the polarization. The effect of external stress on the BiFeO3 thin film, which was controlled by applying an electric field to the highly piezoelectric substrate, showed smaller atomic shifts than for the case of applying an electric field to the film, despite the similar tetragonality.
出处 《Nano Research》 SCIE EI CAS CSCD 2018年第7期3824-3832,共9页 纳米研究(英文版)
关键词 in situ measurement atomic displacementunder electric field time-resolved X-ray microdiffraction FERROELECTRICS in situ strain engineering in situ measurement atomic displacementunder electric field time-resolved X-ray microdiffraction ferroelectrics in situ strain engineering
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部