摘要
A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of I nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots （GQDs） greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of -707 mA·W^-1, short response time of 0.2 ms, and good specific detectivity of -4.51×10^9 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high- performance photodetectors.
A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of I nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots （GQDs） greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of -707 mA·W^-1, short response time of 0.2 ms, and good specific detectivity of -4.51×10^9 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high- performance photodetectors.
