在线电解修整磨削与化学机械抛光相结合的蓝宝石基片组合加工技术

ELID Grinding and CMP Compound Processing Technology for Sapphire Substrates

通过分析ELID磨削和CMP抛光两种加工技术的原理和特点,充分结合两种技术的优点,对蓝宝石基片进行超光滑纳米级精度的组合加工。从理论上分析和计算了蓝宝石的临界切削深度,以及在不同粒度砂轮下的脆性和延性磨削方式;采用不同粒度的砂轮对蓝宝石基片进行超精密ELID磨削实验,快速地获得高质量的加工表面,同时采用磁流变斑点法对加工面的亚表面损伤进行测量;利用CMP抛光技术对磨削加工后的表面进行光整,以减少磨削时产生的加工缺陷,使工件的表面质量得到进一步改善与提高,最终获得亚纳米级的表面粗糙度。

The machining principles and characteristics of ELID grinding and CMP were analyzed,a newtechnology integrated with ELID grinding and CMP was applied to machine ultra smooth and nano-precisionsapphire substrates. At first,the critical depth of cut was calculated through the theory analyses,the ductileand brittle processing ways of sapphire substrates discussed by different particle sizes of the grinding wheels.The high-quality machined surfaces were obtained by a series of ELID grinding experiments with thesegrinding wheels,and the sub-surface damages of ground surfaces were measured by the magnetorheologicalfinishing（MRF）method;as the final finishing,CMP was used to decrease subsurface damages and to furtherimprove surface quality,and the sub-nanometer of surface roughness was achieved.