摘要
基于ANSYS及MATLAB仿真软件对半桥型IGBT器件的热分布情况进行实验和仿真建模研究。首先对IGBT器件的温度分布进行仿真建模,然后采用红外成像仪和结温测试设备分别进行了实验测量,对仿真结果进行了验证。仿真和实验研究结果表明,在器件温度分布图中,温度最高点在于芯片处以及芯片与引线连接处,证实了影响IGBT器件可靠性的主要因素在于器件升温过热引起的引线断裂、剥离、芯片过温及焊层老化等问题。
Based on the ANSYS and MATLAB simulation software,the thermal distribution of the half bridge IGBT device was simulated and studied.The temperature distribution of IGBT was verified by the practical measurement of infrared thermography and junction temperature test equipment.It is indicated in the temperature profile that the highest temperature is on the chip and at the contact point of the chip and the wire bonding.It is proved that the main factors influencing the reliability of IGBT include the fracture and stripping of lead,the over-temperature of chip,the aging of welding layer.
作者
方佳怡
刘宪云
夏丽
李磊
FANG Jiayi;LIU Xianyun;XIA Li;LI Lei(School of Mathematics and Physics, Changzhou University, Changzhou , Jiangsu , 213164, CHN)
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2018年第3期178-183,共6页
Research & Progress of SSE
基金
国家自然科学基金资助项目(11404039
11404041)
教育部第46批留学回国人员科研启动基金资助项目(Nos.【2013】693)
