单晶硅/锗薄膜材料的转移技术及柔性器件应用

Transfer techniques for single-crystal silicon/germanium nanomembranes and their application in flexible electronics

单晶硅/锗材料是当今半导体工业的基石.当厚度缩小到纳米尺寸量级时,这些材料的薄膜在力学、光学、电学、热学等领域均展现出显著区别于体材料的独特性质与应用.超薄的厚度使单晶硅/锗纳米薄膜在获取可以媲美有机半导体材料的柔性特征的同时,仍保持远高于有机材料的迁移率特性.以上性质使硅/锗纳米薄膜成为高性能柔性电子器件的理想构筑单元,在物联网、可植入/可穿戴电子器件、仿生电子器件等诸多领域表现出非常广阔的应用前景.本文通过"先转移单晶硅/锗纳米薄膜,后搭建器件"以及"先制备单晶硅/锗纳米薄膜器件,后转移整体"两个角度,深入探讨了不同转移策略的特点,以及在柔性器件中的应用;阐述了当前该领域最新研究进展及需要重点解决的科学问题与技术难点.

Single-crystal silicon and germanium are the basis of the modern semiconductor industry.They exhibit unique mechanical,optical,electrical,and thermal properties when their thicknesses decrease to the nanoscale.Ultra-small thickness provides silicon and germanium flexibility.Compared with organic semiconductors,silicon and germanium have much higher carrier mobility.This makes them ideal components for high-performance devices and gives them great potential in the application of the internet of things,wearable/implantable electronics,and bio-electronics.In this review,we discuss the strategies of ＂Device-Last Approach＂ and ＂Device-First Approach＂ for silicon and germanium nanomembrane devices and their applications in flexible electronics.The latest development of transferred nanomembranes and their applications in flexible electronics,as well as the scientific and technique issues to be solved,are specifically discussed.