摘要
利用脉冲磁控溅射法分别在工业纯钛TA2表面和高能喷丸(HESP)工业纯钛TA2表面沉积TiN薄膜,采用扫描电镜(SEM)、X射线衍射仪(XRD)分析TiN薄膜的形貌、晶体结构,采用划痕仪、纳米压痕仪测量TiN薄膜的膜基结合力、硬度和弹性模量,研究TA2基材HESP对TiN薄膜生长和力学性能的影响。结果表明:在脉冲磁控溅射条件下,基材HESP可改变TiN薄膜生长择优取向,原始基材表面TiN薄膜为(200),(220)晶面共同择优生长,而HESP20min基材表面(200)面择优取向十分明显;基材HESP可改变TiN薄膜生长方式,原始基材表面TiN薄膜为混合生长,HESP基材表面薄膜变成层状生长,使薄膜更致密;基材HESP可提高TiN薄膜膜基结合力,原始态基材表面TiN薄膜结合力为21.4N,HESP20rain基材表面TiN薄膜结合力达到42.3N,提高了约一倍;基材HESP可以提高TiN薄膜抵抗塑性变形能力,且原始基材表面TiN薄膜硬度和弹性模量最小,分别为30.1,343.6GPa,HESP20min基材表面TiN薄膜硬度达到35.1GPa,弹性模量达到347.9GPa。
TiN thin films were deposited on commercial pure titanium TA2 surface and high energy shot peening (HESP) pure titanium TA2 surface by pulsed magnetron sputtering. The morphology and crystal structure of TiN thin film were analyzed by scanning electron microscope (SEM) and X-ray diffractometer (XRD). The film matrix combining force, hardness and elastic modulus of TiN film were measured by scratch tester and nano indenter. The effect of TA2 substrate HESP on the growth and mechanical properties of TiN thin films was investigated. The results showed that the substrate HESP could change preferred orientation of the growth of TiN film, and the TiN film on base material grew preferentially along (200) and (220) crystal faces, while the one on HESP 20 min substrate had preferred orientation of surface (200). The substrate HESP could change the growth mode of TiN film. The TiN film on base material was a mixed growth, while the surface film on HESP substrate became a layered growth, so the film became more compact. Besides, the substrate HESP could improve the film base binding force of TiN film. The bonding force of TiN film on original substrate surface was 21.4 N, and the adhesion strength of the TiN film on surface of HESP 20 min substrate reached 42.3 N, which was almost doubled. The base HESP could improve the resistance to plastic deformation of TiN film, and the original surface hardness and elastic modulus were the smallest, which were respectively 30.1 and 343.6 GPa, while the hardness of the one on HESP 20 rain substrate reached 35.1 GPa, and the elastic modulus reached 347.9 GPa.
作者
张聪惠
高鹏
王耀勉
胡晓
Zhang Conghui;Gao Peng;Wang Yaomian;Hu Xiao(School of Metallurgical Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, China)
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2018年第8期841-849,共9页
Chinese Journal of Rare Metals
基金
国家自然科学基金项目(51674187)
陕西省科技统筹创新工程计划项目(2015KTCQ01-80)资助
关键词
基材HESP
TIN薄膜
薄膜生长
力学性能
base material HESP
TiN thin film
membrane growth
mechanical properties