摘要
Owing to its outstanding electronic properties, black phosphorus （BP） is considered as a promis- ing material for next-generation optoelectronic devices. In this work, devices based on BP/MXene （Zrn＋1CnT2, T = O, F, OH, n = 1, 2） van der Waals （vdW） heterostructures are designed via first-principles calculations. Zrn＋1CnW2 compositions with appropriate work functions lead to the for- mation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C202 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band struc- ture of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/A electric field. The versatile electronic prop- erties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.
Owing to its outstanding electronic properties, black phosphorus （BP） is considered as a promis- ing material for next-generation optoelectronic devices. In this work, devices based on BP/MXene （Zrn＋1CnT2, T = O, F, OH, n = 1, 2） van der Waals （vdW） heterostructures are designed via first-principles calculations. Zrn＋1CnW2 compositions with appropriate work functions lead to the for- mation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C202 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band struc- ture of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/A electric field. The versatile electronic prop- erties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.
