摘要
A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid（HNO3） vapor is reported. The HNO3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80μA to 7.71μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.
A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid（HNO3） vapor is reported. The HNO3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80μA to 7.71μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61504113,61674113 and 51622507
the Natural Science Foundation of Shanxi Province under Grant No 2016011040
the Natural Science Foundation of Fujian Province under Grant No 2018J01567
the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi Province under Grant No 2016138
