摘要
The interfacial and electrical properties of high-k LaTaON gate dielectric Ge metal-oxide-semiconductor（MOS）capacitors with different tantalum（Ta） contents are investigated. Experimental results show that the Ge MOS capacitors with a Ta content of -30% exhibit the best interfacial and electrical properties, including low interfacestate density（7.6 × 10^11 cm^-2 eV^-1）, small gate-leakage current（8.32 × 10^-5 A/cm^2） and large equivalent permittivity（22.46）. The x-ray photoelectron spectroscopy results confirm that the least GeOx is formed at the Ge surface for the sample with a Ta content of -30% due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON.
The interfacial and electrical properties of high-k LaTaON gate dielectric Ge metal-oxide-semiconductor（MOS）capacitors with different tantalum（Ta） contents are investigated. Experimental results show that the Ge MOS capacitors with a Ta content of -30% exhibit the best interfacial and electrical properties, including low interfacestate density（7.6 × 10^11 cm^-2 eV^-1）, small gate-leakage current（8.32 × 10^-5 A/cm^2） and large equivalent permittivity（22.46）. The x-ray photoelectron spectroscopy results confirm that the least GeOx is formed at the Ge surface for the sample with a Ta content of -30% due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON.
基金
Supported by the National Natural Science Foundation of China under Grant No 61274112
