摘要
The （60）Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon（SONOS） memory cells in pulse mode（programmed/erased with pulse voltage） and dc mode（programmed/erased with direct voltage sweeping） are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad（Si） radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.
The （60）Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon（SONOS） memory cells in pulse mode（programmed/erased with pulse voltage） and dc mode（programmed/erased with direct voltage sweeping） are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad（Si） radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.
基金
Supported by the National Natural Science Foundation of China under Grant No 616340084
the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2014101
the Austrian-Chinese Cooperative R&D Projects of International Cooperation Project of Chinese Academy of Sciences under Grant No 172511KYSB20150006
