基于隧穿机理的石墨烯纳米带准一维器件设计

Design of a Graphene Nanoribbon Quasi-One Dimensional Device Based on Tunneling Mechanism

隧穿场效应晶体管（TFET）在低功耗领域具有很好的应用前景,以优化新型准一维TFET为目的,通过数值仿真研究了以石墨烯纳米带（GNR）为沟道材料的准一维TFET以及受器件尺寸和掺杂浓度控制的器件输运特性及开态和关态电流。以能带调控理论结合局域态密度与电流谱密度间的关系为手段对隧穿效应的机理进行了详细的探讨,分析了禁带宽度、栅覆盖范围、沟道长度和源漏掺杂浓度4个变量对输运过程的影响,进而确定了其对器件性能影响的变化趋势,并总结了相应原则,得到了有利于提高驱动能力、降低静态功耗以及满足数字电路一般性要求的准一维器件的设计策略。这一研究可为基于准一维材料的TFET的设计提供参考,推动基于平面材料的新型器件的发展。

The tunnel field effect transistor（TFET）has very good application prospects in low power consumption domains.In order to optimize the new quasi-one dimensional TFET,the quasi-one dimensional TFET with the graphene nanoribbon（GNR）channel was investigated through the numerical simulation,and the transport properties and on-state and off-state currents of the TFET controlled by the device size and doping concentration were studied.The mechanism of the tunneling effect was discussed in detail by the combination of the energy band regulation theory with the relation of the density of local states and current spectral density.The influences of four variables i.e.the band gap,gate coverage range,channel length and doping concentration of the source and drain regions on the transport process were analyzed.Furthermore,the variation trends of the impact on device performances were determined,and corresponding principles were summarized.The design strategy of the quasi-one dimensional device was obtained,which is beneficial to improve the driving capability,reduce the static power consumption and meet general requirements of digital circuits.The research can provide a reference for the design based on the quasi-one dimensional TFET and promote the development of new devices based on planar materials.