B位掺杂Sn对BNT-BLZT陶瓷电学行为的影响

Effect of B Bit Doping SN on the Electrical Behavior of BNT-BLZT Ceramics

采用固相反应制备无铅反铁电陶瓷[(Bi_(1/2)Na_(1/20)_(0.92)Ba_90.05)La_(0.02)][SnxZr_(0.95-x)Ti_(0.05)]O_3,研究了材料的相结构、介电及储能性能。结果表明,随着Sn含量增加,晶粒尺寸变化不大,但该材料介电损耗整体呈减小趋势,并且TF-R向低温区移动。Sn元素的加入对提高该材料的储能性能效果明显,当Sn加入量超过0.06时,出现双电滞回线,说明Sn元素对该体系材料电学性能有一定的优化作用。

The [（Bi1/2Na1/2）0.92Ba0.05La0.02][SnxZr（0.95-x）Ti0.05]O3（x=0.00, 0.03, 0.06, 0.09） anti-ferroelectric ceramics were fabricated by the conventional solid state reaction method, the phase structure, dielectric and energy storage properties of the materials were studied. The results show that the grain size does not change with the increase of Sn content, but the dielectric loss of the material is decrease, and the Tf-R move to the low temperature zone. The addition of Sn element has obvious effect on improving the energy storage performance of the materials, when the amount of Sn is more than 0.06, a double electric hysteresis loop appears, the Sn element material electrical performance of the system has certain optimization function.