寄生电感对SiC MOSFET开关振荡的影响及其抑制

Influence of Parasitic Inductance on SiC MOSFET Switching Oscillation and Suppression

SiC器件具有高结温、高阻断电压、高热导、低损耗等特点,在电动汽车电机控制器方面具有巨大的应用前景。但由于SiC MOSFET的开关速度更快,在寄生参数的作用下,开关振荡比Si基器件严重很多。本文将研究寄生电感对SiC MOSFET开关振荡的影响,对基于SiC器件的变换电路PCB设计给予一定的指导,并给出了抑制SiC MOSFET开关振荡的建议。

SiC devices have high junction temperature, high blocking voltage, high thermal conductivity, low loss compared with Si counterpart, and have a great application prospect in the field of electric vehicle motor controller. But because of the faster switching speed of SiC MOSFET, the switch oscillation is more serious than the Si based device. This paper will study the influence of parasitic inductance on SiC MOSFET switch oscillation, and then give some guidance on PCB design of the SiC based converter, and finally put forward the method of suppressing SiC MOSFET switch oscillation.