黄铜矿半导体电学特性对其中等嗜热菌浸出行为的影响

Effect of Electrical Properties of Chalcopyrite Semiconductor on Its Bioleaching Behavior by Moderately Thermophiles

为了研究黄铜矿半导体电学特性对其生物浸出的影响机制,采用霍尔效应测试技术分析了3种不同来源黄铜矿的半导体电学特性,并在45℃、170 r/min、2%矿浆浓度条件下进行了中等嗜热混合菌浸出试验。结果表明,黄铜矿A的载流子浓度为-9.190×10^(18)cm^(-3),绝对值明显高于黄铜矿B和C的载流子浓度(-3.065×10^(18)cm^(-3)和-2.183×10^(17)cm^(-3));黄铜矿A的电阻率为0.054 65Ω·cm,明显低于黄铜矿B和C的电阻率(0.146 9Ω·cm和0.930 6Ω·cm);黄铜矿的载流子浓度、电阻率与其铜浸出率存在明显联系,黄铜矿的载流子浓度越高、电阻率越小,铜的浸出速率就越高,浸出19 d后,3种黄铜矿纯矿物(A、B、C)的铜浸出率分别为66.1%,25.3%和21.4%;电化学试验结果表明,3种黄铜矿的氧化还原反应过程基本相同,但黄铜矿A的腐蚀电流密度明显高于另外两者。

In order to study the influence mechanism for the electrical properties of chalcopyrite semiconductor on its bioleaching behavior,Hall effect test was conducted on chalcopyrite from three different regions,and bioleaching tests were also carried out by a mixed moderately-thermophilic bacteria at 45 ℃,with the rotating speed of 170 r/min and pulp concentration of 2%. It is found that chalcopyrite A has a carrier concentration of-9. 190 × 10^（18） cm^（-3）,with the absolute value obviously higher than that of chalcopyrite B and C（-3. 065 × 10^（18） cm^（-3） and-2. 183 × ^（17） cm^（-3）,respectively）,but has the resistivity（0. 054 65 Ω·cm） much lower than that of chalcopyrite B and C（0. 146 9 Ω·cm and 0. 930 6 Ω·cm,respectively）. It is concluded that there＇s a certain relationship between the concentration of carrier,resistivity and copper leaching rate,and a higher concentration of carrier and a lower resistivity of chalcopyrite will lead to a higher leaching rate of copper. Tests showed the copper leaching rates of three kinds of chalcopyrite（ A,B,C） after 19 d leaching were 66. 1%,25. 3% and 21. 4%,respectively. And the electrochemical test result showed that redox reaction of three kinds of chalcopyrite were almost the same,but the corrosion current density of chalcopyrite A was obviously higher than that of another two.