高功率半导体整流管芯片散热效率计算仿真

Calculation and Simulation of Heat Dissipation Efficiency of High Power Semiconductor Rectifier Chip

为了保证芯片性能,避免芯片受损,对高功率半导体整流管芯片散热效率进行计算和仿真研究。通过有限体积法进行热计算,利用质量守恒方程、能量守恒方程以及动量守恒方程对热传递问题进行描述,确定高功率半导体整流芯片边界条件,给出散热效率计算公式。在恒温室的防风罩中进行测试,依据模型和边界条件,通过ANSYS参数化编程语言APDL构建高功率半导体整流芯片三维有限元模型,分析芯片散热情况。研究平行排列微通道、正交网络结构、螺旋环绕结构和树枝分形结构微通道下芯片散热效率。向有限元模型整流管芯片主体施加热载荷,获取不同基板材料的温度分布情况,得到不同基板材料下芯片散热效率。结果表明,高功率半导体整流管芯片微通道应选用树型结构,基板材料应选择Cu/Si C复合基板。

In order to ensure the performance of the chip and avoid the damage of the chip,the heat dissipation efficiency of the high power semiconductor rectifier chip is calculated and simulated. The finite volume method is applied to the thermal calculation,and the heat transfer is described by the mass conservation equation,the energy conservation equation and the momentum conservation equation. The boundary conditions of the high-power semiconductor rectifier chip are determined, and the calculation formula of the heat dissipation efficiency is given.Based on the model and boundary conditions,the three-dimensional finite element model of high power semiconductor rectifier chip is built based on the model and boundary conditions,and the heat disijDation of the chip is analyzed based on the model and boundary conditions in the windshield of the thermostat chamber ANSYS APDL.The cooling efficiency of microchannels under the microchannel of parallel arrangement of microchannel,orthogonal network structure,spiral surround structure and branch fractal structure is studied. The heating load of the rectifier chip is applied to the finite element model,and the temperature distribution of different substrate materials is obtained ,and the heat dissipation efficiency of chips under different substrate materials is obtained.The results show that the microchannel of high power semiconductor rectifier chip is a tree structure,and the substrate material is se-lected the Cu/SiC composite substrate.