变温生长多晶硅对8 inch硅片几何参数影响

Effect of Variable Temperatures Growing Polysilicon on Geometric Parameters of 8 inch Silicon Wafer

随着硅片技术的不断发展,硅片背表面沉积多晶硅技术得到了广泛应用。在硅片背表面沉积多晶硅时,温度是其整个过程中最重要的控制参数。通过改变620℃与660℃沉积膜厚比例,测试不同膜厚比例的翘曲、弯曲、晶粒大小、洁净区深度等重要参数,并结合实际需求,确定了以先620℃沉积200 nm,再用660℃沉积600 nm的工艺。该工艺既能满足后道工序对于洁净区的要求,又能有效降低硅片的几何形变。

With the continuous development of silicon wafer technology,the technology of polysilicon deposition on the surface of silicon wafer has been widely used. When polysilicon is deposited on the surface of the silicon wafer,temperature is the most important control parameter in the whole process.Changing the thickness ratio of deposition film at 620 ℃ and 660 ℃. Some important parameters,such as WARP,BOW,grain size and depth of clean area,are tested with different thickness ratio. Combined with the actual demand,the first deposition process is 200 nm in 620 ℃,the second deposition process is600 nm in 660 ℃. The process can not only meet the requirements of the clean zone in the post process,but also effectively reduce the geometric deformation of the silicon wafer.