ZnO光催化剂的改性研究

Study on Modification of ZnO Photocatalyst

近年来,半导体光催化剂作为一种"绿色技术"受到了越来越多的关注,ZnO由于具有3.37eV的适当带隙,成本低,环保等特点,已被系统地作为光催化剂进行研究。然而,较大带隙导致对可见光的利用率低,且光生电子-空穴对能够快速内部重组,限制了其在实际中的应用。为了解决这些问题,研究人员做了很多改性研究。本文主要综述了rGO/ZnO、g-C3N4/ZnO、TiO_2/ZnO和CdS/ZnO复合材料的改性研究。

In recent years,semiconductor photocatalyst,as a kind of ＂ green technology＂,has been received more and more attention. Zn O has been studied as photocatalyst by the numbers because of having the appropriate band gap of3. 37 e V,low cost,environmental protection and other characteristics. However,larger bandgap leads to low utilization of visible light,and photogenerated electron-hole pairs can quickly recombine. Thus,its practical application is limited.To solve these problems,a lot of modification studies have been done by the researchers. The modification of composites was mainly reviewed,such as r GO/Zn O,g-C3N4/ZnO,TiO2/ZnO and Cd S/ZnO.