退火温度对氮化钽薄膜电阻器性能的影响

Effect of Annealing Temperatures on Properties of Tantalum Nitride Thin Film Resistor

通过反应直流磁控溅射法在Si片表面沉积氮化钽(Ta N)电阻薄膜,并在空气中进行退火,系统研究了退火温度对薄膜的物相组成、微观形貌、电阻性能的影响。结合X射线衍射(XRD)物相分析、扫描电子显微镜(SEM)形貌分析及电阻性能测试结果,Ta N薄膜最佳退火温度为400~450℃,在此温度范围内退火,可制备出与硅基底附着良好、较小电阻温度系数(TCR,≤±100×10-6/℃)、2000 h老化电阻变化率(ACR)约0.43%的高稳定Ta N薄膜电阻器。

Tantalum nitride（ Ta N） thin films were deposited on the surface of Si substrate by reactive direct current magnetron sputtering,and annealed at different temperatures under air atmosphere. Effects of annealed temperatures on the phase composition,microscopic structure,and electrical properties of the as-sputtered films were investigated systematically. Considering of X-ray diffraction data,scanning electron microscope and resistance test results,the best annealing temperature range of Ta N was 400 ～ 450 ℃ with good adhesion on Si substrate,small temperature coefficient of resistance（ TCR,≤ ± 100 × 10^（-6）/℃） and small aging change rate（ ACR） of about 0. 43% after 2000 h aging.