一种选择单粒子瞬态脉冲敏感结点的方法

A Method of Selecting Sensitive Nodes for Single Event Transient Pulse

逻辑电路中NMOS管或者PMOS管受到高能粒子撞击,会产生单粒子瞬态脉冲错误。针对这种现象,提出一种识别和选择电路中敏感结点的新方法,并与门的逻辑掩蔽效应加权综合考虑,对所选择的结点通过增大恢复管的尺寸来加固,以减小单粒子效应导致的软错误率。

If the NMOS or PMOS transistors in logic circuits are hit by high-energy particles,a single event transient pulse error may occur. In order to mitigate this issue,this paper presents a new method to identify and select sensitive nodes in the circuit. This method is used along with the logical masking effect.The selected nodes are hardened by increasing the size of restoring transistors and this will reduce the soft error rate caused by single event effects.