宽禁带电力电子器件及其应用综述(上)——碳化硅器件

A Survey of Wide Bandgap Power Electronic Devices and Applications(Part Ⅰ)——Silicon Carbide Devices

传统硅材料器件在高温、高压、高开关频率等诸多应用领域受到限制,而新型宽禁带半导体材料(以碳化硅和氮化镓为代表)的出现突破了电力电子器件的发展瓶颈,成为未来功率半导体器件发展的必然趋势。本文介绍了碳化硅材料的优良特性,碳化硅器件的常用类型、应用领域、国内外最新研究进展,最后总结了该器件目前发展存在的问题,并提出建议。

The traditional silicon material devices are limited in many applications, such as high temperature, high voltage and high switching frequency. The new wide bandgap semiconductor materials, represented by silicon carbide and gallium nitride, break the bottleneck of the development of electric and electronic devices, which will lead the present and future markets. The excellent characteristics of silicon carbide, the common types of silicon carbide devices, the application fields and the latest research progress at home and abroad are introduced in this paper. At last, the existing problems in the development of the device are summarized, and some suggestions are put forward.