化学气相沉积法制备石墨烯过程中温度及压力分布研究

Study on Temperature and Pressure Distribution of Graphene by Chemical Vapor Deposition Method

采用计算流体力学软件(CFD)对化学气相沉积法制备石墨烯过程中CVD反应器内温度场及压力场进行模拟,分别研究了两种初始压力下反应器内温度及压力变化情况。研究结果表明在初始的常压条件下反应器内温度分布及压力分布均匀性较差,导致气体流动性也较为紊乱,而在低压条件下反应器内温度及压力分布较为均匀,甲烷气体平稳流经过反应加热区,从而有助于石墨烯整个合成过程的稳定进行。

The temperature and pressure field of chemical vapor deposition process of graphene in CVD reactor were simulated by computational fluid dynamics software（CFD）,Temperature field,pressure field were studied under different pressure condition in the reactor. The results show that the pressure and temperature in the reactor are not uniform under initial atmospheric,gas flow is disorder.Under low pressure,the temperature and pressure distribution in reactor are more uniform. Methane gas flows smoothly through reaction heating zone,which helps to stabilize the whole process of graphene synthesis.