多周期分层溅射硫化物靶制备铜锌锡硫薄膜太阳电池

Preparation of Cu_2ZnSnS_4 Thin Film Solar Cells by Cyclically and Sequentially Sputtering Three Sulfide-targets

按照ZnS/CuS/SnS/CuS的顺序分层溅射硫化锌、硫化铜和硫化亚锡三个二元硫化物靶,制备铜锌锡硫(CZTS)的预制层。在预制层总厚度不变的情况下按照上述顺序将预制层分多个周期溅射,然后在360℃对含硫预制层进行低温退火,再在硫气氛中进行高温(600℃)硫化处理,制备出CZTS薄膜。周期数为3的CZTS薄膜表面平整致密、晶粒大小均匀,禁带宽度为1.50eV。用这种薄膜制备的CZTS薄膜太阳电池性能最好,其开路电压(Voc)为623mV,短路电流密度(Jsc)为11.79mA/cm^2,光电转换效率达到2.93%。

Layered films of Cu2ZnSnS4（CZTS） thin films were prepared by sequentially and cyclically sputtering three targets of ZnS, CuS and SnS, which then were annealing at 360℃ for 30 min, afterwards they were sulfurized in a graphite box with 0.5 g sulfur powder at 600℃ for desired period of time. For three cycles of sputtering（T3）, the prepared CZTS thin layered film is dense and compact with smooth surface,uniform crystal-grain size and a band gap of 1.5 e V. The solar cell assembled by the T3 ZTS film has better performance with the following parameters： the open circuit voltage 623 mV and the short-circuit current density 11.79 mA/cm^2, respectively. Correspondingly, the photoelectric conversion efficiency could reach 2.93%.