一种IGBT模块的新型建模与瞬态仿真方法研究

New modeling and transient simulation of IGBT

针对所采用的仿真方法无法全面评价IGBT模块可靠性的问题,提出了一种新型的IGBT模块仿真方法:对IGBT模块工作过程中的瞬态损耗进行了分析和计算,并对IGBT模块进行三维建模与瞬态下流固耦合仿真。以FS800R07A2E3为例,采用一维仿真分析计算其瞬态损耗,并将瞬态损耗等效为半正弦波,作为一维边界条件加载至三维仿真模型;同时基于Star-CCM+软件,采用瞬态仿真与流固耦合仿真相结合的方法,仿真得到了模块内部温度场分布云图和芯片最高结温波动数据,并采用英飞凌实验数据验证了仿真模型的准确性。研究结果表明:模块内部三相的不均匀性在2℃左右,瞬态仿真下的最高结温比稳态仿真下高7℃左右;该仿真方法更加接近IGBT工作的实际情况。

Aiming at the lack of overall assessment on IGBT module simulation,a new type method was proposed： The transient loss of IGBT module in working process was analyzed and calculated and the fluid-solid coupling method was adopted. 1-D simulation was used to calculate the transient loss of Infineon FS800 R07 A2 E3 Module. The transient loss was equivalent to half-sine wave and loaded into the 3-D model as boundary conditions. The fluctuation and distribution of junction temperature were studied by the coupled method of transient simulation and 3-D simulation based on Star-CCM ＋ software. Meanwhile,Infineon experimental data was adopted to verify the accuracy of the model.The results indicate that a step change about 2 ℃ in U/V/W phases and the maximum junction temperature in transient simulation is about7 ℃ higher than the steady state. The actual working situation of IGBT is better simulated by this new method.