摘要
针对所采用的仿真方法无法全面评价IGBT模块可靠性的问题,提出了一种新型的IGBT模块仿真方法:对IGBT模块工作过程中的瞬态损耗进行了分析和计算,并对IGBT模块进行三维建模与瞬态下流固耦合仿真。以FS800R07A2E3为例,采用一维仿真分析计算其瞬态损耗,并将瞬态损耗等效为半正弦波,作为一维边界条件加载至三维仿真模型;同时基于Star-CCM+软件,采用瞬态仿真与流固耦合仿真相结合的方法,仿真得到了模块内部温度场分布云图和芯片最高结温波动数据,并采用英飞凌实验数据验证了仿真模型的准确性。研究结果表明:模块内部三相的不均匀性在2℃左右,瞬态仿真下的最高结温比稳态仿真下高7℃左右;该仿真方法更加接近IGBT工作的实际情况。
Aiming at the lack of overall assessment on IGBT module simulation,a new type method was proposed: The transient loss of IGBT module in working process was analyzed and calculated and the fluid-solid coupling method was adopted. 1-D simulation was used to calculate the transient loss of Infineon FS800 R07 A2 E3 Module. The transient loss was equivalent to half-sine wave and loaded into the 3-D model as boundary conditions. The fluctuation and distribution of junction temperature were studied by the coupled method of transient simulation and 3-D simulation based on Star-CCM + software. Meanwhile,Infineon experimental data was adopted to verify the accuracy of the model.The results indicate that a step change about 2 ℃ in U/V/W phases and the maximum junction temperature in transient simulation is about7 ℃ higher than the steady state. The actual working situation of IGBT is better simulated by this new method.
作者
沈天浩
黄瑞
杨帆
陈俊玄
冯权
洪文华
俞小莉
SHEN Tian-hao;HUANG Rui;YANG Fan;CHEN Jun-xuan;FENG Quan;HONE Wen-hua;YU Xiao-li(College of Energy Engineering,Zhejiang University,Hangzhou 310000,China;SAIC Volkswagen Co.Ltd.,Shanghai 201805,China)
出处
《机电工程》
CAS
北大核心
2018年第7期767-772,共6页
Journal of Mechanical & Electrical Engineering
基金
国家自然科学基金资助项目(51476143)
关键词
电机控制器
IGBT
结温
瞬态
流固耦合
MCU
IGBT
junction temperature
transient
fluid-solid coupling