摘要
讨论了金属氧化物半导体表面的气 -气、气 -固反应及其相应的电子过程 ,建立了分析气敏作用机理的理论模型 ,并提出了改进传感器性能的指导性意见。
The reactions of gas gas and gas solid on the surface of metal oxide semiconductor and reactive electronic processes are discussed in this paper.Also,the theoretical model for analysiing gas sensitive mechanism is established,and some guiding suggestions for improving perfoumances of gas sensor are provided in this paper.
出处
《西安理工大学学报》
CAS
2002年第2期144-147,共4页
Journal of Xi'an University of Technology
