MEMS用硅片的磨削工艺研究

Research on Grinding Technology of Silicon Wafers Used for MEMS

基于MEMS用硅片的特点,分析了自旋转磨削工艺对其加工的影响。分别从磨料粒度、主轴转速、砂轮轴向进给速度几个方面对MEMS用硅片的磨削工艺参数进行了优化设计。结果表明,磨料粒度大小直接影响磨削硅片表面的粗糙度,随着磨料粒度的减小,硅片表面的粗糙度数值大幅度降低;此外,磨料粒度与主轴转速都是影响磨削热产生的因素,磨料粒度、主轴转速设置不当均易导致"焦片"现象的出现;砂轮轴向进给速度影响硅片表面的损伤层深度,轴向进给速度越小,后续抛光过程所需去除量越小,表明硅片表面引入的损伤深度越小。

The grinding technology which was suitable to the silicon wafers used for MEMS wasresearched in this paper. The process parameters including the grit size, spindle speed and feed speedwere optimized and designed. Results showed that the roughness of the silicon wafer was directlyaffected by the grit size. The value of the roughness substantially descended with the decrease of thegrit size. In addition, the grit size and spindle speed were all the factors for the production of thegrinding heat. The wafer was more easily scorched if the grit size and spindle speed were set falsely.The surface damage depth of silicon wafer was related to the feed speed. The smaller of the feed speedwas, the less the removal quantity of the polishing process was, which demonstrated that the surfacedamage depth was shallower.