大规模GaN纳米线阵列的制备及表征

Synthesis and Characterization of Large Scale GaN Nanowire Arrays

氮化镓(GaN)纳米线阵列是制备下一代光电器件和电子器件最有前途的半导体材料。研究制备规则整齐排列的高质量GaN纳米线阵列,是其商业化应用的基础。本文主要研究气相化学沉积(CVD)法过程中NH_3流量、衬底类型以及生长温度实验条件对GaN纳米线阵列形貌结构的影响,并深入探索了不同长度GaN纳米线阵列的光学性质。对CVD生长GaN纳米结构进行SEM表征,表明Ga/N对生长取向影响较大;通过XRD图谱、Raman图谱分析,表明GaN纳米线的结晶度与衬底材料、生长温度等重要参数相关。使用PL对不同长度GaN纳米线表征,发现GaN纳米线阵列长度为5μm的结晶度最高光学性质最好,展现出了广阔的应用前景。

GaN nanowire arrays are one of the most promising materials for the next generation of optoelectronic devices and electronic devices. In this paper, the effects of CVD NH3 flow, substrate type and growth temperature on the morphology and structure orGaN nanowire arrays are studied, and the optical properties of different length GaN nanowire arrays are explored. The GaN nano structure of CVD was characterized by SEM, which showed that Ga/N had great influence on the growth orientation. The crystallinity of the GaN nanowires was related to the important parameters of the substrate material and growth temperature through the XRD atlas and Raman atlas analysis. Using PL to characterize GaN nanowires with different lengths, it is tbund that the highest crystallinity of the 5μm GaN nanowire arrays is the best, showing a broad application prospect.