射频反应磁控溅射制备ZnO薄膜的工艺研究

Process parameters of ZnO films deposited by RF reactive magnetron sputtering

Zn O因其制备成本低和优异的压电性能在薄膜体声波器件中得到广泛应用。本文采用射频反应磁控溅射法,以Au为底电极,在硅(100)衬底上沉积了氧化锌(Zn O)薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)、台阶仪对不同工艺参数下制得薄膜的晶体结构、表面形貌和厚度进行了表征。研究了溅射功率、溅射气压和溅射气氛对Zn O薄膜结构影响,讨论了溅射功率和薄膜形貌及厚度的关系。结果显示在溅射功率为200 W、溅射气压0.8 Pa、氧氩体积流量比为0.4时,Zn O薄膜的c轴取向性最高,表面粗糙度最低,可用于压电器件。

ZnO is widely applied in film bulk acoustic resonator due to its lowpreparation cost and excellent piezoelectric properties.Zinc oxide（ZnO） films were deposited on silicon（ 100） substrates with Au bottom electrode by RF magnetron sputtering. The crystal structure,surface morphology and thickness of deposited films were investigated by X-ray diffraction（ XRD）,atomic force microscopy（ AFM） and stylus profiler,respectively. The influence of sputtering power,pressure and atmosphere on film structure was systematically studied,and the relationship between sputtering power and film thickness and surface morphology was discussed as well. The results showthat the films prepared at 200 W,0. 8 Pa and 0. 4 volume flowratio of oxygen to argon gas achieve the highest c-axis orientation and the lowest surface roughness. The deposited ZnO films can be used in piezoelectric devices.