改善多晶硅染色解析度的研究

The Investigation of Polysilicon Stain Resolution Improvement

对掺杂的晶体硅进行染色,进而分析掺杂区域的深度、宽度以及形貌,在当今的集成电路制造中扮演着重要作用。多晶硅因其淀积工艺简单、与IC制造工艺高度兼容等优点,在集成电路的制造工艺中得到了广泛的应用,但因其特殊的微观结构,而呈现出与单晶硅不同的电学行为与化学特性。常规的单晶硅染色方法用于处理多晶硅染色时,效果往往不太理想。本文通过改良染色化学试剂的配方,显著提高了多晶硅染色的解析度。

The analysis of depth, width and profile of doped silicon after staining, plays an extraordinary important role in today＇s IC manufacturing. Polysilicon has been widely used in IC manufacturing field due to its simple deposition process, high-compatibility with IC fabrication process, however, owing to the particular micro construction, polysilicon exhibit different electric behavior and chemical character from single-crystal silicon. The result was not ideal if the staining process of single-crystal silicon was carried out on polysilicon. This paper has dramatically improved the resolution of polysilicon staining by tuning the formula of the chemical agent.